Title:
MANUFACTURE OF SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JPS60136306
Kind Code:
A
Abstract:
PURPOSE:To form single crystal silicon film islands having a same plane orientation by connecting one another the semiconductor film islands in a first direction and in a second direction different from the first direction by any substance having higher heat conductivity than that of the insulating substrate. CONSTITUTION:A polycrystalline silicon film 3 is deposited on the quartz substrate to make islands. The islands are connected one another by polycrystalline silicon films 9 being narrower than width of the islands. A carbon susceptor 10 functioning as a heater is manufactured as illustrated. If the said semiconductor substrate 12 is placed and moved on the carbon susceptor 10, the polycrystalline silicon film 3 melts like a belt and the zone melting proceeds, when it passes through the section 4 having a higher temperature over the melting point 13 of Si. Since the recrystallized portions have a lower temperature than the melting silicon when the islands are being connected one another, heat flows to the recrystallized silicon film sides and the crystallization is performed without resulting the supercooling phenomenon. After the first recrystallization is performed in this way, another recrystallization may be performed perpendicularly to the first recrystallization to improve the crystallization.
Inventors:
FUKAMI AKIRA
KOBAYASHI YUTAKA
SUZUKI TAKAYA
KOBAYASHI YUTAKA
SUZUKI TAKAYA
Application Number:
JP24400483A
Publication Date:
July 19, 1985
Filing Date:
December 26, 1983
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L27/00; H01L21/20; H01L21/324; (IPC1-7): H01L21/324; H01L27/00
Attorney, Agent or Firm:
Katsuo Ogawa