Title:
MANUFACTURE OF SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JPS6060716
Kind Code:
A
Abstract:
PURPOSE:To obtain a flat selectively-and-epitaxially-grown film by a method wherein the percentage of the aperture area against the entire area of a substrate is brought to 50% or more. CONSTITUTION:After an SiO2 film has been deposited on a silicon substrate 1, the SiO2 film of 500Angstrom or thereabout is left by performing a reactive ion etching method, and an SiO2 insulating film pattern 2 having a vertical wall face is formed. Then, when a polycrystalline silicon 3 is deposited and an etching is performed, polycrystalline silicon is left only on the side wall of the film in the initial film thickness. A rectangular aperture part distributed on the whole surface is provided in order to increase the ratio sigma of the total area of the aperture part, and the ratio sigma is set at 55%. Then, the surface 4 of the substrate 1 is exposed by performing an etching on the film 2, and an Si single srystal film 5 is grown on the region 4 only. As a result, a method wherein a flat selectively-and-epitaxially-grown film will be obtained is accomplished, thereby enabling to enhance its industrial value.
Inventors:
ISHITANI AKIHIKO
Application Number:
JP16976383A
Publication Date:
April 08, 1985
Filing Date:
September 14, 1983
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L21/76; H01L21/205; (IPC1-7): H01L21/76
Attorney, Agent or Firm:
Uchihara Shin
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