Title:
MANUFACTURE OF SEMICONDUCTOR THIN FILM
Document Type and Number:
Japanese Patent JP3422290
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To create at a high throughput on a large substrate a highly uniform semiconductor thin film having a high electron-mobility, by projecting the double pulses of a laser beam on the non-single-crystal semiconductor thin film, and by setting energy density in each pulse within the threshold of its fine- crystallization energy density caused by the projection of a pulse laser beam.
SOLUTION: After depositing as a cover film a silicon oxide film 2 on a glass substrate 1 by a plasma chemical vapor deposition method, an a-Si film 3 is deposited thereon. Then, a XeCl laser beam 50 having predetermined dimensions is projected on the a-Si film 3 to set the threshold of its fine- crystallization energy-density to, e.g. 470 mJ/cm2. In this case, by synchronizing two light sources 4, 5 with each other through a controller 6, the double pulses of a laser beam are projected through an optical system 7 on the a-Si film 3 of the glass substrate 1 provided in a chamber 8. As the projective conditions of the double pulses of the laser beam, the energy densities of first and second laser beams are set respectively, e.g. to 400 mJ/cm2 and 240 mJ/cm2 to make them not larger than the threshold of the fine-crystallization energy-density of the a-Si thin film 3.
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Inventors:
Okumura Exhibition
Application Number:
JP20712899A
Publication Date:
June 30, 2003
Filing Date:
July 22, 1999
Export Citation:
Assignee:
NEC
International Classes:
H01L21/20; H01L21/02; H01L21/268; H01L21/324; H01L21/336; H01L27/12; H01L29/786; H01L21/77; H01L21/84; (IPC1-7): H01L21/20; H01L21/268; H01L21/336; H01L27/12; H01L29/786
Domestic Patent References:
| JP7335586A | ||||
| JP9246183A |
Other References:
Ｉｓｈｉｈａｒａ Ｒ．，Ｙｅｈ Ｗ．Ｃ．，Ｈａｔｔｏｒｉ Ｔ．ａｎｄ Ｍａｔｓｕｍｕｒａ Ｍ．，Ｅｆｆｅｃｔｓ ｏｆ Ｌｉｇｈｔ Ｐｕｌｓｅ Ｄｕｒａｔｉｏｎ ｏｎ Ｅｘｉｍｅｒ−Ｌａｓｅｒ Ｃｒｙｓｔａｌｌｉｚａｔｉｏｎ Ｃｈａｒａｃｔｅｒｉｓｔｉｃｓ ｏｆ ｓｉｌｉｃｏｎ Ｔｈｉｎ Ｆｉｌｍ，Ｊｐｎ．Ｊ．Ａｐｐｌ．Ｐｈｙｓ．，１９９５年 ４月，Ｐａｒｔ １，Ｎｏ．４Ａ，，ｐｐ．１７５９−１７６４
Ｉｓｈｉｈａｒａ Ｒ．ａｎｄ Ｍａｔｓｕｍｕｒａ Ｍ．，Ａ Ｎｏｖｅｌ Ｄｏｕｂｌｅ−ｐｕｌｓｅ Ｅｘｃｉｍｅｒ−Ｌａｓｅｒ Ｃｒｙｓｔａｌｌｉｚａｔｉｏｎ Ｍｅｔｈｏｄ ｏｆ Ｔｈｉｎ−Ｆｉｌｍｓ，Ｊｐｎ．Ｊ．Ａｐｐｌ．Ｐｈｙｓ．，１９９６年 ８月，Ｐａｒｔ １，Ｖｏｌ．３４，Ｎｏ．８Ａ，ＰＰ．３９７６−３９８１
Ｉｓｈｉｈａｒａ Ｒ．ａｎｄ Ｍａｔｓｕｍｕｒａ Ｍ．，Ａ Ｎｏｖｅｌ Ｄｏｕｂｌｅ−ｐｕｌｓｅ Ｅｘｃｉｍｅｒ−Ｌａｓｅｒ Ｃｒｙｓｔａｌｌｉｚａｔｉｏｎ Ｍｅｔｈｏｄ ｏｆ Ｔｈｉｎ−Ｆｉｌｍｓ，Ｊｐｎ．Ｊ．Ａｐｐｌ．Ｐｈｙｓ．，１９９６年 ８月，Ｐａｒｔ １，Ｖｏｌ．３４，Ｎｏ．８Ａ，ＰＰ．３９７６−３９８１
Attorney, Agent or Firm:
Masahiko Desk (2 outside)
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