Title:
MANUFACTURE OF SEMICONDUCTOR
Document Type and Number:
Japanese Patent JP3146527
Kind Code:
B2
Abstract:
PURPOSE: To prevent a crystal defect from occurring and extend storage time by making an oxide film residual on a storage node forming part.
CONSTITUTION: Instead of etching a second insulation film 9 of a part forming a storage node 24, a contact window between a second wire 20 and a substrate 1 is opened. Then after a fourth insulation film 18 is deposited, the fourth insulation film 18 only on the part of the contact window of the second wire 20 and the substrate 1 is etched. Thus leak current from the storage node 24 to the substrate 1 is reduced, and also a contact between the second wire 20 and the substrate 1 can be easily formed. In addition, since no side wall insulation film 10 is formed on a drain region of a transfer MISFET, no generation crystal defect due to a stress derived from a shape such as the side wall insulation film 10 and highly concentrated ion implantation occurs, thereby reducing leak current from the storage node of the drain part to the substrate 1 and improving pause time.
Inventors:
Chiaki Kudo
Ichiro Nakao
Ichiro Nakao
Application Number:
JP17664691A
Publication Date:
March 19, 2001
Filing Date:
July 17, 1991
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H01L27/06; H01L21/8234; H01L21/8242; H01L27/108; (IPC1-7): H01L27/108; H01L21/8234; H01L27/06
Domestic Patent References:
| JP1145852A | ||||
| JP2144963A | ||||
| JP3204969A | ||||
| JP63100750A |
Attorney, Agent or Firm:
Fumio Iwahashi (2 others)