PURPOSE: To conduct a heat treatment at a low temperature and to prevent graphite from being precipitated on the surface of an ohmic electrode by a method wherein a nickel-silicon alloy layer whose nickel composition is at specific atomic % is formed on an n-type silicon carbide substrate, the heat treatment is conducted and the ohmic electrode is formed on the silicon carbide substrate.

CONSTITUTION: Ni and Si are sputtered and vapor-deposited simultaneously, by an RF magnetron sputtering method, on the surface of an n-type SiC substrate 1, and an Ni-Si alloy layer 2 is formed in such a way that Ni and Si are set at an atomic ratio of 38:62. As a heat treatment after that, this assembly is annealed in a vacuum of 2×10 Torrs, at 600°C and for 30min, and a current- voltage characteristic without a rectification property is displayed. In addition, when the composition ratio of Ni to Si is changed, a good ohmic property is displayed when the composition of Ni is at an atomic ratio of 33% or higher and 67% or lower. Thereby, an electrode which can be connected easily is obtained without a need for a heat treatment at a high temperature, by a heat treatment at a temperature of 700°C or lower and without precipitating graphite on the face of the electrode.