Title:
MANUFACTURE OF SILICON CARBIDE SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP3721588
Kind Code:
B2
Abstract:
PURPOSE: To evade influence of oxygen and recover crystal defect at the time of ion implantation, by a method wherein, after ions are implanted in a silicon carbide semiconductor substrate, an oxygen shielding film is formed on the surface, and high temperature heat treatment is performed.
CONSTITUTION: An SiC epitaxial wafer 4 is coated with photoresist 5. By exposure and development, a window for ion implantation is formed, and nitrogen ions 6 are implanted. After the ion implantation, the photoresist 5 is ashed by oxygen plasma, and then eliminated with release solution. A silicon carbide film 7 is formed by a high frequency sputtering method. Since the percentage of hydrogen contained in the silicon nitride film 7 is small, the film quality is dense, and therefore the silicon nitride film 7 acts as a surface protecting film in a high temperature environment. Heat treatment at 1300°C is performed for 5 hours in a nitrogen atmosphere. Thereby the oxidation of the SiC semiconductor substrate which is caused by oxygen in inert gas can be restrained, and crystal defect at the time of ion implantation can be recovered.
Inventors:
Koichi Hashimoto
Application Number:
JP23979894A
Publication Date:
November 30, 2005
Filing Date:
October 04, 1994
Export Citation:
Assignee:
Fuji Electric Device Technology Co., Ltd.
International Classes:
H01L29/872; H01L21/265; H01L21/31; H01L21/314; H01L21/318; H01L21/331; H01L29/47; H01L29/73; (IPC1-7): H01L21/331; H01L21/265; H01L21/31; H01L21/314; H01L21/318; H01L29/47; H01L29/73; H01L29/872
Domestic Patent References:
| JP6151860A | ||||
| JP5136426A | ||||
| JP3083332A | ||||
| JP2102557A |
Attorney, Agent or Firm:
Masaharu Shinobe
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