MANUFACTURE OF SILICON CONDUCTOR - NIPPON TELEGRAPH & TELEPHONE

Title:

MANUFACTURE OF SILICON CONDUCTOR

Document Type and Number:

Japanese Patent JPH01266743

Kind Code:

A

Abstract:

PURPOSE: To enable withstand voltage of thermal oxide film to be higher by forming amorphous silicon thin film with a polycrystal silicon obtained by heat treatment.

CONSTITUTION: A silicon conductor 13 consists of a polycrystal silicon obtained by allowing an amorphous silicon thin film containing impurities giving conductivity to be subjected to heat treatment. Also, it is obtained by making a mixture gas of silicon hydrogenerated object (SinH2n+2, n≥2) and group 3 or group 5 hydrogenerated object as a material gas and by building up amorphous silicon on a substrate 11 in a build-up temperature range of 400W600°C. It increases gate withstand voltage of a thermal oxide film.

Inventors:

NAKAYAMA SATOSHI
MORIE TAKASHI
KIMIZUKA MASAKATSU

Application Number:

JP9656188A

Publication Date:

October 24, 1989

Filing Date:

April 18, 1988

Export Citation:

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Assignee:

NIPPON TELEGRAPH & TELEPHONE

International Classes:

H01L23/52; H01L21/28; H01L21/3205; H01L29/78; (IPC1-7): H01L21/28; H01L21/88; H01L29/78

Attorney, Agent or Firm:

Akita Aki

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