PURPOSE: To manufacture a silicon film at a low temperature such as a room temperature, by projecting a synchrotron radiative beam on the surface of silicon oxide to form the silicon film while deoxidizing the surface of silicon oxide.

CONSTITUTION: An SiO2 film 51 is formed on the surface of a silicon substrate 52, and thereon, a masking material 53 formed out of a resist, a metal and SiN thin film, etc., is created. The masking material 53 is etched selectively by a photolithography, etc., so as to have desired opening parts. Thereafter, when projecting a synchrotron radiative beam thereon, the surface region of the SiO2 layer 51 is converted into silicon, and a silicon wiring layer 56 is formed. Thereafter, when removing the masking material 53, the silicon wiring layer 56 is so obtained as to be embedded in the surface part of the SiO2 layer 51 formed on the surface of the silicon substrate 52. In this manner, wirings can be created using the silicon layer formed on the silicon oxide layer.