PURPOSE: To uniformly obtain a preferable single-crystallized region by forming a plurality of striplike nitrogen silicide films of 600 of thickness in parallel on a polycrystalline silicon film of 0.5μm of thickness, and repeatedly scanning it in parallel.

CONSTITUTION: A silicon oxide film 2 of 1.0μm of thickness and a polycrystalline silicon film 3 of 0.5μm of thickness are laminated on a silicon substrate 1. A plurality of striplike silicon nitride films 4aW4d of 600 of thickness and 10μm of width are formed at an interval of 10μm in parallel on the film 3. The region of the films 4aW4d becomes a second striplike region of large absorption rate of a laser light on the film 3 directly under the films 4aW4d, and the region therebetween becomes a first striplike region of small absorption rate of laser light on the film 3 directly thereunder. The irradiation of the laser light for recrystallization is repeatedly made to scan in parallel the striplike region.