PURPOSE: To highly integrate a solid image pick-up device by forming a transfer electrode on a semiconductor substrate so that it may cover the first impurity region to serve as a buried channel made on a one-conductivity-type semiconductor substrate, and forming a second impurity region on the semiconductor substrate, using this transfer electrode as a mask.

CONSTITUTION: A p-type impurity layer 2 is made on the main surface of, for example, an n-type semiconductor substrate 1, subsequently a gate insulating film 3 is made by thermal oxidation. Then, n-type impurities are implanted to form a buried channel region 4. Next, a transfer electrode 5 is made by stacking, for example, polysilicon and patterning it, and an insulating film 6 to cover the transfer electrode is made by wet-oxidizing it at high temperature. Then, using the transfer electrode 5 and the insulating film 6 as masks, the ions of p-type impurities are implanted to form a p-type impurity region 8 in a read gate region 9.