PURPOSE: To save a region for margins for mask alignment or the like and to realize an element having fine construction and high density, by forming channel stopper regions by self alignment while using a reading gate electrode and an electrode of a charge transfer section as a mask.

CONSTITUTION: Channel stopper regions 16 surrounding a photosensing section 17 are formed by self alignment by using first, second and third polysilicon layers 12∼14 as a mask. Particularly, since they are formed by self alignment also with a reading gate electrode 15 extended from the third polysilicon layer 14, the margin for mask alignment can be decreased and hence the area of the photosensing section can be increased by that much. Further, since the electrodes 12∼14 are formed from the polysilicon layers suitable for fine working, they are allowed to have pattern configurations close to the limit of the pattern rule. Further, second channel stopper regions 11 can be formed previously so that they are isolated reliably line by line, separately from the channel stopper regions 16 surrounding the photosensing section 17. In this manner, an element having fine construction and high density can be realized.