PURPOSE: To prevent the generation of loose joint of the first layer transfer electrode of a transfer electrode having a multilayer structure.

CONSTITUTION: A silicon oxide film 13, formed by a thermal oxidation method, and a polycrystalline silicon film 14 and a silicon oxide film 15, formed by a CVD method, are formed in order on a silicon substrate 10 and these films 14 and 15 are patterned using a resist mask to form transfer electrodes 17. After the mask is removed, the film 13 is etched to expose the substrate 10. The surface of the exposed substrate 10 is thermally oxidized to form a thin silicon oxide film 18 and a silicon oxide film 19 and a polycrystalline silicon film 20 are formed in order on this film 18 by a CVD method. The film 20 is patterned to form transfer electrodes 21.