PURPOSE: To protect a lower electrode from corrosion and disconnection and thereby to improve the yield rate by a method wherein a photoetching process for an upper electrode is accomplished through corrosion in the production of a solid-state image pickup device, constituted of upper electrodes and lower electrodes and amorphous semiconductor layers sandwiched between them, installed on an insulating substrate.
CONSTITUTION: A lower electrode of Al-Si alloy 11 is formed on an insulating substrate by sputtering, which is followed by photoetching. Next, an amorphous semiconductor layer 12 is formed, whereon an upper electrode of ITO film 13 is formed by sputtering, whereon a photoetching resist is further formed for the photoetching of the ITO film 13. Aluminum is then deposited by evaporation. Use of an alkaline solution for etching results in electrolytic corrosion to etching, in the region where the ITO film 13 and aluminum are in contact. Finally, the amorphous semiconductor layer 12 is subjected to dry etching, and the resist is peeled off for the completion of the manufacturing process. By using this technique, the disconnection in the lower wiring during the photoetching of the upper electrode 13 can be greatly reduced, which contributes to improvement in the yield.
KURIHARA HAJIME
TAKESHITA TETSUYOSHI
TAKENAKA SATOSHI
OKA HIDEAKI
HASEGAWA KAZUMASA
MATSUO SHUICHI
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