PURPOSE: To eliminate possible deterioration of devices caused by heat treatment at high temperature as well as to enable those such as superconducting devices, the relative wiring of semiconductor integrated circuits and the like to be formed by depositing a thin film whose composition ratio of a superconductor in an oxide series contains atoms on a substrate, and introducing oxygen onto said thin film after said film has been crystallized by means of short time annealing capable of selectively heating said thin film.

CONSTITUTION: A thin film 2 formed by Y1Ba2Cu3Ox is deposited on a substrate (YSZ) 1 made of yttria stabilized zirconia, then, the thin film 2 is crystallized with CW-Ar laser beams scanned. In the second place, the thin film is put into a cylindrical plasma reactor 11 together with the substrate thereof so as to let a plasma treatment be processed with oxygen introduced. owing to this constitution, a heat conducting thin film constituted by Y1Ba2Cu3O7-δ can be formed with no heat treatment processed at high temperature.