PURPOSE: To improve the yield in a complete product check process by forming a test pattern of a simple plane on a wafer and measuring a characteristic frequency of the test pattern so as to evaluate an electrode forming state of the device.

CONSTITUTION: At first a metallic film being an electrode of a surface acoustic wave device is formed on the entire face of a wafer 1. Then lots of photo resist patterns specifying a surface shape of surface acoustic wave devices are formed n the surface (the formation position is indicated by a caption 3). Then etching processing is applied to form the electrode for the surface acoustic wave device and the test pattern. In this state, the test pattern and dispersion in an electrode film thickness and an electrode wire width of a large number of surface acoustic wave devices or the like are estimated by measuring the characteristic frequency of the test pattern, and the acceptance is discriminated by the wafer.