Title:
MANUFACTURE OF SURFACE EMISSION ELEMENT
Document Type and Number:
Japanese Patent JP2713244
Kind Code:
B2
Abstract:
PURPOSE: To provide the manufacturing method of a surface emission element with which its offset amount can be set at the optimum amount when a gain offset method is adopted for improvement of thermal characteristics of the surface emission element.
CONSTITUTION: Crystal is grown on the active layer 5 provided between two resonators, which are composed of multilayer film reflecting mirrors 3 and 7, at the board temperature lower than the ordinary growth board temperature, the information of resonance peak and gain peak is obtained after the growth of crystal, and an element is heat-treated at the prescribed temperature in such a manner that the offset amount between the gain peak and the resonant peak becomes the desired temperature characteristics based on the above- mentioned information. As an active layer is grown at a low temperature, the deviation in the amount of gain offset, due to inevitable film thickness distribution and the fluttering etc., of flux, from the designed value can be prevented, and as a gain offset amount is set by the subsequently conducted heat treatment, an optimum offset amount can be set at all times.
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Inventors:
Mikihiro Kajita
Application Number:
JP17165995A
Publication Date:
February 16, 1998
Filing Date:
June 15, 1995
Export Citation:
Assignee:
NEC
International Classes:
H01L33/06; H01L33/12; H01L33/20; H01L33/30; H01S3/105; H01S5/00; (IPC1-7): H01S3/18
Other References:
【文献】’95春応物 30p-ZG-5 P.1101
Attorney, Agent or Firm:
Suzuki Akio
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