Title:
MANUFACTURE OF THIN FILM PRESSURE SENSOR
Document Type and Number:
Japanese Patent JPH01173846
Kind Code:
A
Abstract:
PURPOSE:To obtain a diaphragm which is large in tensile strength by performing deposition hardening processing by passing an insulating film and a pressure sensitive resistance layer through a process of about 540 deg.C and 2hr respectively when laminating the insulating film and pressure sensing resistance layer at the time of working an SUS630 material into the diaphragm after a solid solution heat treatment and then forming the thin film pressure sensor. CONSTITUTION:The SUS630 material is solidified for 2hr at about 1,020-1,060 deg.C. Then the solidified SUS630 is ground into the shape of the diaphragm. At this time, the grinding is facilitated because the SUS630 is before the deposition hardening treatment. Silicon oxide is laminated as the insulating film on the diaphragm after said treatment by plasma CVD at prescribed temperature for a prescribed time, and polycrystalline silicon is further laminated as the pressure sensitive resistance layer by a plasma method at prescribed temperature for a prescribed time, thereby performing the deposition hardening treatment of the SUS630 in this process. Then the overannealing of the SUS630 is eliminated to prevent a decrease in tensile strength, and the deposition hardening processing man-hours and grinding man-hours are reduced.
Inventors:
KAMAIKE MAKOTO
TACHIKA ATSUSHI
TABATA AKI
INAGAKI HIROSHI
SUZUKI ASATAKE
TACHIKA ATSUSHI
TABATA AKI
INAGAKI HIROSHI
SUZUKI ASATAKE
Application Number:
JP22734087A
Publication Date:
July 10, 1989
Filing Date:
September 10, 1987
Export Citation:
Assignee:
KOMATSU MFG CO LTD
International Classes:
G01L9/04; C23C16/30; C23C16/50; H01L29/84; (IPC1-7): C23C16/30; C23C16/50; G01L9/04; H01L29/84