Title:
MANUFACTURE OF THIN FILM RESISTOR
Document Type and Number:
Japanese Patent JP3026656
Kind Code:
B2
Abstract:
PURPOSE: To obtain a so-called highly selective etching method wherein the etching rate of a CrSi based film on an oxide film is larger than that of an oxide film as a substratum, and obtain a manufacturing method for a highly reliable CrSi based thin film resistor which method does not generate voids at the end portion of the CrSi based thin film resistor.
CONSTITUTION: In a method for forming a CrSi based thin film resistor on an oxide film 2, mixed gas of CF4 and oxygen wherein oxygen of volume ratio of 70% or higher is contained is turned into plasma, in a plasma generating chamber of a plasma etching equipment wherein the plasma generating chamber and a plasma etching chamber are isolated. The CrSi based film 7 on an oxide film 2 arranged in the etching chamber is selectively irradiated with activated fluorine radicals. Thereby the CrSi based film 7 on the oxide film 2 is etched with high selectivity.
Inventors:
Mikimasa Suzuki
Makio Iida
Makoto Mutoh
Makio Iida
Makoto Mutoh
Application Number:
JP25192591A
Publication Date:
March 27, 2000
Filing Date:
September 30, 1991
Export Citation:
Assignee:
株式会社デンソー
芝浦メカトロニクス株式会社
芝浦メカトロニクス株式会社
International Classes:
H01C17/06; H01C17/12; H01L21/02; H01L21/822; H01L27/04; (IPC1-7): H01L27/04; H01L21/3065; H01L21/822
Domestic Patent References:
| JP2235335A |
Other References:
【文献】「超微細加工入門」(株)オーム社 pp66
Attorney, Agent or Firm:
Hirohiko Usui