Title:
MANUFACTURE OF THIN-FILM SOI SUBSTRATE
Document Type and Number:
Japanese Patent JP2602597
Kind Code:
B2
Abstract:
PURPOSE: To achieve not only the perfectness of crystals but also the uniformity of the film thickness of an SOI-layer thin film, to simplify a process and to sharply reduce the cost of the process in a pasted SOI structure.
CONSTITUTION: A thin-film SOI substrate is manufactured in the following manner: an oxide film for coupling use is formed on at least one out of a p-type silicon substrate for coupling use and a silicon substrate for support use; both substrates are pasted via the oxide film; a positive fixed charge is introduced into the oxide film; an n-type inversion layer is formed in the p-type silicon substrate for coupling use near the interface of the oxide film; then, a positive voltage is applied to the p-type silicon substrate for coupling use; a chemical etching operation is performed; and the etching operation is stopped at the interface between a depletion layer including the n-type inversion layer and the p-type silicon substrate.
Inventors:
Takao Abe
Masatake Katayama
Akio Kanai
Oki good
Masayoshi Nakano
Masatake Katayama
Akio Kanai
Oki good
Masayoshi Nakano
Application Number:
JP35893591A
Publication Date:
April 23, 1997
Filing Date:
December 27, 1991
Export Citation:
Assignee:
Shin-Etsu Semiconductor Co., Ltd.
International Classes:
H01L21/02; H01L21/20; H01L21/304; H01L21/3063; H01L21/762; H01L27/12; (IPC1-7): H01L27/12; H01L21/02; H01L21/304
Attorney, Agent or Firm:
Shoji Ishihara