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Patent Searching and Data


Title:
MANUFACTURE OF THIN FILM SUPERCONDUCTOR
Document Type and Number:
Japanese Patent JPH02296724
Kind Code:
A
Abstract:

PURPOSE: To obtain a superconducting thin film of good quality and high capacity by irradiating a conjugate oxide thin film having an Nd2CuO4 type crystal structure with hydrogen ions or hydrogen plasma.

CONSTITUTION: A substrate 11 in which a conjugate compound film expressed by general formula of (A1-yBy)2CuX4 (where A denotes at least one kind among Nd, Sm and Pr, B denotes at least one kind of Ce and Th and X denotes at least one kind of O and F as well as O≤y≤0.2 is regulated) and having an Nd2CuO4 type crystal structure as essential components is formed on the surface by sputtering is charged to an ion source 31, to which a hydrogen gas is introduced as well as high frequency voltage is impressed on electrodes 32 and 33 to generate plasma. In the plasma, magnetic sources 34 are arranged; voltage is impressed between a substrate stand 35 on which the substrate 11 is disposed and the hydrogen ion and the plasma are generated effectively in the ion source; the hydrogen ions are drawn out from the ion source to irradiate the conjugate compound film, which is held under heating at ≤500°C. the superconducting thin film of good quality and high capacity having an Nd2CuO4 type crystal structure can be manufactured with good reproducibility.


Inventors:
KAMATA TAKESHI
HAYASHI SHIGENORI
ADACHI HIDEAKI
HIRAO TAKASHI
WASA KIYOTAKA
Application Number:
JP11894389A
Publication Date:
December 07, 1990
Filing Date:
May 12, 1989
Export Citation:
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Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
C04B41/87; C01G1/00; C01G3/00; H01B12/06; H01B13/00; H01L39/24; (IPC1-7): C01G3/00; C04B41/87; H01B12/06; H01B13/00; H01L39/24
Attorney, Agent or Firm:
Shigetaka Awano (1 person outside)