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Patent Searching and Data


Title:
MANUFACTURE OF THIN-FILM TRANSISTOR ARRAY
Document Type and Number:
Japanese Patent JPH02271637
Kind Code:
A
Abstract:

PURPOSE: To enable a stable gate signal to be propagated by laminating a metal at the bottom part within each gate wiring groove which is formed by performing etching to a substrate of each gate wiring part and then forming a second insulation film with a thickness reaching the surface of the substrate on the metal layer for increasing the thickness of gate wiring.

CONSTITUTION: A sensitive resin film 51 is formed on a substrate 50 by applying a sensitive resin and the sensitive resin film 51 at a plurality of gate wiring parts is selectively eliminated. After that, the surface of the substrate 50 in each gate wiring part is selectively etched to form a plurality of gate wiring groove 52a and then a metal film 53 for wiring gate is formed at the bottom part within each gate wiring groove 52a. Furthermore, after the process for eliminating the sensitive resin film 51 and the metal film 53 for wiring gate on it, a second film 54 with a thickness reaching the surface of the substrate 50 on the metal film 53 is formed. It will increase the thickness of gate wiring, reduces wiring resistance at the gate wiring part, and prevents disconnection, and interlayer short-circuiting of an upper wiring easily.


Inventors:
NISHIKI TAMAHIKO
YOSHIDA MAMORU
NOMOTO TSUTOMU
SEKIDO MUTSUHIRO
Application Number:
JP9408289A
Publication Date:
November 06, 1990
Filing Date:
April 13, 1989
Export Citation:
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Assignee:
OKI ELECTRIC IND CO LTD
International Classes:
H01L29/78; H01L21/336; H01L29/786; (IPC1-7): H01L21/336; H01L29/784
Attorney, Agent or Firm:
Kakimoto Kyosei