Title:
MANUFACTURE OF THIN FILM TRANSISTOR
Document Type and Number:
Japanese Patent JPH01253715
Kind Code:
A
Abstract:
PURPOSE:To manufacture the thin film transistor (TR) with excellent characteristics with good reproductivity by forming a through hole and forming a drain electrode after removing a previously formed protection film or a sticking film, etc., on a surface by plasma processing, etc. CONSTITUTION:The protection film 11 which has etching selectivity to the material of the picture element electrode 3 of a transparent base material 1 with a gate electrode 2 is provided at a through hole corresponding part on the picture element electrode 3, and then the through hole 10 is formed. Then only the film 11 is removed by wet etching and the prescribed drain electrode 7 is formed. In another method, the through hole 10 is formed without forming the film 11 and then the exposed electrode 3 is processed by hydrogen plasma processing and light etching using dilute acid to remove a surface damage layer and the sticking layer; and then the drain electrode 7 is formed. Consequently, the interface resistance between the electrodes 3 and 7 is reduced to uniform the respective transistor characteristics of an array, the reproductivity is good, and the product yield is improved.
Inventors:
NAGASE TOSHIRO
Application Number:
JP8174588A
Publication Date:
October 11, 1989
Filing Date:
April 01, 1988
Export Citation:
Assignee:
TOPPAN PRINTING CO LTD
International Classes:
H01L27/12; G02F1/133; G02F1/136; G02F1/1368; H01L21/336; H01L29/78; H01L29/786; (IPC1-7): G02F1/133; H01L27/12; H01L29/78