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Title:
MANUFACTURE OF THIN FILM TRANSISTOR
Document Type and Number:
Japanese Patent JPH05136168
Kind Code:
A
Abstract:

PURPOSE: To obtain a manufacturing method for a thin film transistor wherein a thermal oxide film is made uniform without decreasing the mobility of polycrystalline silicon.

CONSTITUTION: A noncrystalline silicon film 12 as a non-single crystal silicon thin film is formed on an insulative substrate 11. After the noncrystalline silicon film 12 is patterned in a specified island shape, a thermal oxide film 13 is formed by thermal oxidation. Silicon in a channel part is recrystallized as polycrystalline silicon 15 of large grain diameter by heat treatment. A polycrystalline silicon film is formed and patterned as a gate electrode 16, and a source.drain region is formed in a self-alignment manner. A silicon oxide film as an interlayer insulating film 17 is formed, and a contact hole 18 is made in the interlayer insulating film 17. An aluminum electrode 19 is formed and patterned, thereby completing the manufacturing process of an N channel MOS thin film transistor.


Inventors:
KASHIMOTO NOBORU
Application Number:
JP1991000295913
Publication Date:
June 01, 1993
Filing Date:
November 12, 1991
Export Citation:
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Assignee:
TOSHIBA CORP
TOSHIBA ELECTRONIC ENG
International Classes:
H01L27/12; H01L21/336; H01L29/78; H01L29/786; (IPC1-7): H01L21/336; H01L27/12; H01L29/784
Attorney, Agent or Firm:
樺澤 襄 (外3名)



 
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