Title:
MANUFACTURE OF THIN FILM
Document Type and Number:
Japanese Patent JPS59141219
Kind Code:
A
Abstract:
PURPOSE:To obtain a thin film having scanty inclusion of impurities when the thin film of the desired shape is to be manufactured according to the sputtering method or the plasma CVD method, etc. by a method wherein the material of a small sputtering rate is used as a mask material. CONSTITUTION:A substrate 6 to be adhered with an amorphous silicon film, and a target 7 to emit sputtering ions and confronting with the substrate 6 are arranged in a vacuum chamber 5 filled up with argon gas. Moreover, a mask 9 is equipped to the substrate 6. As the mask 9 thereof, tungsten, etc. are used as a material having a small sputtering rate in an argon atmosphere, and available at comparatively low cost. The sides of the substrate 6 are cooled by liquid helium, etc. When a proper voltage is applied to the substrate 6 side and the target 7 side in such a condition, silicon atoms A are emitted from the target 7, and amorphous silicon films are adhered on the mask 9 and on the substrate 6. After then, by removing the mask 9, the amorphous silicon film of the desired shape is formed on the substrate 6.
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Inventors:
NAKAMURA TAKESHI
HAMANO TOSHIHISA
FUSE MARIO
HAMANO TOSHIHISA
FUSE MARIO
Application Number:
JP1582983A
Publication Date:
August 13, 1984
Filing Date:
February 02, 1983
Export Citation:
Assignee:
FUJI XEROX CO LTD
International Classes:
H01L31/0248; C23C14/04; H01L21/203; H01L21/205; H01L31/04; H01L31/18; (IPC1-7): H01L31/04; H01L31/18
Attorney, Agent or Firm:
Kimura Takahisa