Title:
MANUFACTURE OF THIN FILM
Document Type and Number:
Japanese Patent JPS6054428
Kind Code:
A
Abstract:
PURPOSE:To enable to readily form Si having no pinhole or Si compound by cleaning by dry etching the interior of a reaction chamber. CONSTITUTION:Before growing Si or Si compound film, the interior of a reaction chamber 1 is dry etched by a glow discharge decomposing method by using reaction gas which contains fluorine compound gas to remove a flake of the Si or Si compound which causes a pinhole. In this step, fluorine is adhered into the chamber 1, but in order to remove the fluorine, after dry etching, pure hydrogen is filled in the chamber 1, and a glow discharge decomposition is performed. The work becomes simple by such a manufacturing method, and amorphous Si having no pinhole can be obtained.
Inventors:
HIRANAKA KOUICHI
KAWAI SATORU
TAKAGI NOBUYOSHI
OGAWA TETSUYA
OOURA MICHIYA
KAWAI SATORU
TAKAGI NOBUYOSHI
OGAWA TETSUYA
OOURA MICHIYA
Application Number:
JP16190383A
Publication Date:
March 28, 1985
Filing Date:
September 05, 1983
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L31/04; H01L21/205; H01L21/31; (IPC1-7): H01L21/31; H01L31/04
Attorney, Agent or Firm:
Aoki Akira
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