PURPOSE: To form a high purity thin silicon film having a larger thickness at a high formation speed by depositing fine silicon particles formed by a vapor phase reaction on a heated heat-resistant substrate.
CONSTITUTION: A quartz glass substrate 14 set in a container 11 is heated to about 500°C with a heater 13 and rotated in the arrow direction with a support rod 12. On the other hand, Ar introduced into a plasma torch 17 from a pipe 18 is excited by electric power supplied through a high frequency induction coil 16 to generate plasma, and a vapor phase silicon halide such as SiCl4 is fed into the plasma flame from an inlet 19 and thermally decomposed to form fine silicon particles. The particles are deposited on the substrate 14 to form a tin silicon film 15. In the figure symbol 10 is a treating apparatus for excess gas. A silicon hydride may be used in place of said silicon halide.
NAKAHARA MOTOHIRO
KAWACHI MASAO
