MANUFACTURE OF VACUUM MICRO ELEMENT

Title:

MANUFACTURE OF VACUUM MICRO ELEMENT

Document Type and Number:

Japanese Patent JPH10261361

Kind Code:

A

Abstract:

To provide a manufacturing method of a vacuum micro element using diamond on its emitter.

A silicon board 102 is coated on its surface with an oxide film serving as a gate insulating layer 101 and further a molybdenum(Mo) film serving as a gate electrode layer 103 is formed. The insulating layer 101 and the electrode layer 103 is partly etched to form an opening, in which diamond is grown. The diamond is raised there into the shape of a circular cone so as to gradually close the opening. The diamond depositing on the Mo layer 103 is finally peeled off to finish a vacuum micro element.

Inventors:

SAKUMA HISASHI
SAKAI TADASHI
ONO TOMIO

Application Number:

JP6564297A

Publication Date:

September 29, 1998

Filing Date:

March 19, 1997

Export Citation:

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Assignee:

TOSHIBA CORP

International Classes:

H01J9/02; H01J1/30; H01J1/304; H01J19/24; H01J29/04; H01J31/12; (IPC1-7): H01J9/02; H01J1/30; H01J19/24

Attorney, Agent or Firm:

Togawa Hideaki

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