PURPOSE: To obtain a mask having good flatness and high dimensional stability by using a β-SiC film epitaxially grown on an Si single crystal plate as a mask substrate, forming an absorber pattern, and then removing by etching the single crystal plate.
CONSTITUTION: An Si single crystal substrate 1 is placed on a susceptor, filled in a reduced pressure CVD unit, which is evacuated in high vacuum chamber to heat the susceptor by induction heating with high frequency power to heat the Si substrate. SiHCl3 gas and C3H8 gas flow together with diluting gas (H2) to epitaxially grow a β-SiC film 2 on the substrate 1. Thereafter, a gold metal 3 for absorbing an X-ray is formed by deposition on the film 2, the film 2 is etched in a predetermined pattern, a glass ring 4 is mounted on the substrate not at the side of the film 2, and the substrate 1 is removed by wet etching with HF-HNO3. Accordingly, the ringlike supporting frame of the Si substrate remains to obtain a membrane made of the film 2 and the pattern 3 on the film, thereby forming an X-ray mask.
FURUMURA YUJI
TOKI MASAHIKO
NAKAZAWA TSUTOMU
ITO KIKUO
| JPS55105000A | 1980-08-11 | |||
| JPS59203799A | 1984-11-17 | |||
| JPS5324785A | 1978-03-07 |
| US3873824A | 1975-03-25 | |||
| US3742230A | 1973-06-26 |