Title:
MANUFACTURE OF ZNSE SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPS6011293
Kind Code:
A
Abstract:
PURPOSE:To manufacture a large-sized single crystal of high quality having a uniform composition, free from crystal defects and suitable for use as a substrate for epitaxial growth by compressing a polycrystalline ZnSe body synthesized by a chemical vapor deposition method at a high temp. under hydrostatic pressure. CONSTITUTION:A polycrystalline ZnSe body is synthesized by a chemical vapor deposition method. The body 1 is tightly sealed in an evacuated capsule 2 made of ''Pyrex'' glass or the like, the capsule 2 is put in a porous container 3, and the container 3 is placed on a table 5 in a pressure vessel 4 provided with a heater 6, a heat insulator 7 and a pipe 10 for feeding argon for pressurization. The body 1 is then compressed at about 1,000 deg.C high temp. under about 2,000 atm. hydrostatic pressure for >= about 2hr to form a ZnSe single crystal.
Inventors:
NANBA HIROKUNI
OOSAKA HAJIME
KAMON KOUICHI
HIGUCHI FUMIAKI
OOSAKA HAJIME
KAMON KOUICHI
HIGUCHI FUMIAKI
Application Number:
JP11940683A
Publication Date:
January 21, 1985
Filing Date:
June 29, 1983
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
C30B1/12; C30B29/48; (IPC1-7): C30B1/12; C30B29/48
Attorney, Agent or Firm:
Hidemi Aoki