To provide a manufacturing device and a manufacturing method for a semiconductor single crystal by which a silicon single crystal having a desired defect region or a desired defect-free region can be easily manufactured in high yield.
The manufacturing device for a semiconductor single crystal to control a grown-in defect in a semiconductor single crystal is equipped with: a reset heating means 12 that heats and maintains the single crystal at a thermal hysteresis reset temperature to reset the thermal hysteresis during manufacturing the single crystal which influences the grown-in defect state in the single crystal; and a thermal hysteresis re-imparting means that re-imparts a thermal hysteresis which decreases the temperature of the single crystal from the thermal hysteresis reset temperature and generates a desired state of the grown-in defect state.
COPYRIGHT: (C)2008,JPO&INPIT
ONO NAOKI
| JPH11349394A | 1999-12-21 | |||
| JP2005142434A | 2005-06-02 | |||
| JP2007284324A | 2007-11-01 | |||
| JPH0741389A | 1995-02-10 |
Tadashi Takahashi
Masakazu Aoyama
Yasuhiko Murayama