Title:
HSG-Si膜の製造方法
Document Type and Number:
Japanese Patent JP4422217
Kind Code:
B2
Abstract:
An apparatus for fabricating a semiconductor device having cooling jackets for preventing a gas from being exuded in a reaction chamber, thereby minimizing the generation of contaminating particles. The apparatus includes a reaction chamber having four cooling jackets respectively mounted on a first side wall adjacent to a wafer transfer chamber, a second side wall opposite to the first side wall, an upper wall and a bottom wall. A gate valve is disposed between the reaction chamber and the wafer transfer chamber and has a fifth cooling jacket. While fabricating a polysilicon film using the above apparatus, a pressure of a cassette chamber is controlled to be less than about 0.05 mtorr. Alternatively, a pressure of a cooling chamber and the wafer transfer are both controlled to be less than about 1.0 mutorr.
Inventors:
Park Swim Asahi
Tsuguhide Yanagi
Kim
Minami Noboru
Tsuguhide Yanagi
Kim
Minami Noboru
Application Number:
JP16501297A
Publication Date:
February 24, 2010
Filing Date:
June 06, 1997
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO.,LTD.
International Classes:
H01L21/205; H01L21/28; C23C16/24; C23C16/44; C23C16/54; H01L21/677
Domestic Patent References:
| JP7086189A | ||||
| JP7216550A | ||||
| JP7221034A | ||||
| JP7106280A | ||||
| JP7094487A | ||||
| JP5304273A |
Attorney, Agent or Firm:
Masaki Hattori