Title:
Ｓｉ系活物質の製造方法
Document Type and Number:
Japanese Patent JP7247933
Kind Code:
B2
Abstract:
A method produces a Si-based active material containing a Si-based clathrate compound decreasing a Na element content while maintaining a crystal phase of type II clathrate. The method that produces a Si-based active material containing a Si-based clathrate compound having a crystal phase of type II clathrate, includes: preparing the Si-based clathrate compound by heating an alloy containing a Na element and a Si element at a temperature of 340° C. or more and less than 400° C. (a first heating step), heating the Si-based clathrate compound at a temperature of 340° C. or more and less than 470° C. after the first heating step (a second heating step), cooling the Si-based clathrate compound to a temperature of less than 340° C. after the second heating step (a cooling step), and heating the Si-based clathrate compound at a temperature of 340° C. or more and less than 470° C. after the cooling step (a third heating step).
Inventors:
Atsushi Yoshida
Kazuhiro Suzuki
Mitsutoshi Otaki
Kazuhiro Suzuki
Mitsutoshi Otaki
Application Number:
JP2020052316A
Publication Date:
March 29, 2023
Filing Date:
March 24, 2020
Export Citation:
Assignee:
TOYOTA JIDOSHA KABUSHIKI KAISHA
International Classes:
H01M4/38; C01B33/02
Domestic Patent References:
| JP2021031349A | ||||
| JP2021034279A | ||||
| JP2012224488A | ||||
| JP2013018679A | ||||
| JP2020013650A | ||||
| JP2020017513A |
Attorney, Agent or Firm:
Tatsuto Kishimoto
Akihiko Yamashita
Noriaki Yamamoto
Akihiko Yamashita
Noriaki Yamamoto