接合基板の製造方法

Japanese Patent JP7453288

B2

Provided is a method for producing a bonded substrate, wherein after a copper plate has been joined to a silicon nitride ceramic base board by hot pressing, separation of the copper plate from another object is facilitated. At least one intermediate product is prepared. Each of the intermediate products includes a silicon nitride ceramic substrate, a copper plate, and a brazing material layer. The brazing material layer is present between the silicon nitride ceramic substrate and one of the main surfaces of the copper plate. Next, a coating containing a release agent is formed in such a manner that the other main surface of the copper plate is covered by the coating. Next, hot pressing is performed on at least one of the intermediate products. In this manner, the brazing material layer is transformed into a bonding layer whereby the copper plate is bonded to the silicon nitride ceramic substrate. In addition, each of the intermediate products is transformed into a bonded substrate comprising the silicon nitride ceramic substrate, the copper plate, and the bonding layer, wherein the copper plate has been bonded via the bonding layer to the silicon nitride ceramic substrate. Next, the coat is eliminated.

Takashi Ebigase

JP2022117775A

March 19, 2024

July 25, 2022

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Nippon Insulator Co., Ltd.

C04B37/02; B22F1/00; B22F7/08; B23K1/19; H01L23/12; H05K1/03

JP2007197229A
JP2002314220A
JP2013247158A
JP2017035805A
JP2018008869A
JP2002356376A

Hidetoshi Yoshitake
Takahiro Arita
Kazuki Nakao
Hiroyuki Kita

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