Title:
窒化ガリウムのバルク単結晶の製造法
Document Type and Number:
Japanese Patent JP4113836
Kind Code:
B2
Abstract:
Method of manufacturing aluminum nitride bulk single crystal comprises: (1) forming supercritical solvent using alkali metal ion in an autoclave (1) with a convection controller (2) installed; (2) dissolving feed stock in the solvent to produce supercritical solution; and (3) crystallizing aluminum nitride. Method of manufacturing aluminum nitride bulk single crystal comprises: (1) forming supercritical solvent using alkali metal ion in an autoclave (1) with a convection controller (2) installed; (2) dissolving feed stock in the solvent to produce supercritical solution; and (3) crystallizing aluminum nitride on a seed surface simultaneously or individually where the autoclave is loaded in a furnace unit (4) with a heating (5) or a cooling device (6) and the crystallization of the aluminum nitride is excellent. The bulk single crystal can be applied as an optical element substrate e.g. a laser diode utilizing a nitride semiconductor.
Inventors:
Robert Deviliniski
Roman Drazinski
Jesi Garcinski
Leshek Sheshputowski
Yasuo Kambara
Roman Drazinski
Jesi Garcinski
Leshek Sheshputowski
Yasuo Kambara
Application Number:
JP2003503867A
Publication Date:
July 09, 2008
Filing Date:
June 06, 2002
Export Citation:
Assignee:
AMMONO Sp.zo.o.
International Classes:
C30B29/38; C30B7/10; C30B9/00
Domestic Patent References:
| JP2000327495A |
Foreign References:
| FR2796657A1 |
Other References:
Douglas R. KETCHUM et al.,Crystal growth of gallium nitride in supercritical ammonia,Journal of Crystal Growth,3 January 2001, Vol.222,pp.431-434
R. DWILINSKI et al.,AMMONO method of GaN and AlN production,Diamond and Related Materials,1998, Vol.7, No.9,pp.1348-1350
Shin-ichi HIRANO et al.,Hydrothermal Synthesis of Gallium Orthophosphate Crystals,Bull. Chemi. Soc. Jpn.,1989, Vol.62,pp.275-278
山根久典 他,Naフラックスを用いたGaN単結晶の育成,日本結晶成長学会誌,1998, Vol.25, No.4,pp.14-18
Hisanori YAMANE et al.,Morphology and characterization of GaN single crystals grown in a Na flux,Journal of Crystal Growth,1998, Vol.186,pp.8-12
S. HIRANO et al.,Growth of gallium orthophosphate single crystals in acidic hydrothermal solutions,Journal of Materials Science,1991, Vol.26,pp.2805-2808
R. DWILINSKI et al.,AMMONO method of GaN and AlN production,Diamond and Related Materials,1998, Vol.7, No.9,pp.1348-1350
Shin-ichi HIRANO et al.,Hydrothermal Synthesis of Gallium Orthophosphate Crystals,Bull. Chemi. Soc. Jpn.,1989, Vol.62,pp.275-278
山根久典 他,Naフラックスを用いたGaN単結晶の育成,日本結晶成長学会誌,1998, Vol.25, No.4,pp.14-18
Hisanori YAMANE et al.,Morphology and characterization of GaN single crystals grown in a Na flux,Journal of Crystal Growth,1998, Vol.186,pp.8-12
S. HIRANO et al.,Growth of gallium orthophosphate single crystals in acidic hydrothermal solutions,Journal of Materials Science,1991, Vol.26,pp.2805-2808
Attorney, Agent or Firm:
Samejima Mutsumi
Keiichi
Kyousei Tamura
Hisao Ishii
Mikio Takeuchi
Kei Tamura
Keiichi
Kyousei Tamura
Hisao Ishii
Mikio Takeuchi
Kei Tamura