MANUFACTURING METHOD FOR CAPACITOR, CAPACITOR AND SEMICONDUCTOR DEVICE

Title:

MANUFACTURING METHOD FOR CAPACITOR, CAPACITOR AND SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JP2005183862

Kind Code:

A

Abstract:

To provide a manufacturing method for a capacitor capable of manufacturing the small-sized capacitor having a high capacity at a low cost which is obtained by the manufacturing method, and a semiconductor with the capacitor.

The manufacturing method for the capacitor 1 has a structure in which a dielectric film 3 is held between a first electrode 2 and a second electrode 4. The manufacturing method includes a process in which the first electrode 2 is formed on a base body 53, and a process in which a liquefied body comprising the precursor compound of a bismuth layer compound is arranged on the first electrode 2 by a droplet discharge method. The manufacturing method further includes a process in which the dielectric film 3 is formed by thermally treating the liquefied body, and a process in which the second electrode 4 is formed on the dielectric film 3.

Inventors:

MIYAZAWA HIROSHI
IWASHITA SETSUYA
NOGUCHI MOTOHISA
HIGUCHI AMAMITSU

Application Number:

JP2003426136A

Publication Date:

July 07, 2005

Filing Date:

December 24, 2003

Export Citation:

Click for automatic bibliography generation Help

Assignee:

SEIKO EPSON CORP

International Classes:

H01L27/04; H01L21/316; H01L21/822; (IPC1-7): H01L21/822; H01L21/316; H01L27/04

Attorney, Agent or Firm:

Kazuya Nishi
Masatake Shiga
Masakazu Aoyama

Previous Patent: SUBSTRATE FOR SEMICONDUCTOR MODULE

Next Patent: MAGNETIC SHEET