To provide a method for manufacturing a charge detector, capable of converting an accumulated electric charge into voltage at lower voltage and with high efficiency, having a wide dynamic range for the output voltage, and having proper linearity of conversion efficiency.

The charge detector comprises a second region (308a, 308b) of second conductivity type, prepared in a semiconductor substrate 301 of first conductivity type or a first region of first conductivity type, and an electric charge accumulating section comprising a third region 102 of second conductivity type, located between the surface of the semiconductor substrate or the first region, and the second region. The second region comprises a plurality of regions, including at least a first sub-region 308a and a second sub-region 308b. The second sub-region is located in a deeper part of the semiconductor substrate or the first region than the first sub-region. The impurity concentration of the first sub-region is lower than that of the second sub-region. The impurity concentration of the second region is lower than that of the third region. The second region is formed by injecting impurities which have energy higher than that of the third region.

COPYRIGHT: (C)2006,JPO&NCIPI