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Patent Searching and Data


Title:
MANUFACTURING METHOD FOR CRUCIBLE AND SEMICONDUCTOR INGOT
Document Type and Number:
Japanese Patent JP2006275425
Kind Code:
A
Abstract:

To solve a problem wherein slight amount of melted liquid leaks from a liquid drain port and is solidified before silicon raw material becomes melted liquid completely, thereby reducing yield.

The crucible 1 is composed of a melting crucible 1a and a holding crucible 1b, the melting crucible forms silicon melted liquid by heating and melting the silicon raw material 3 stored in the inside by a heating means 7, and the liquid drain port 4 for draining silicon melted liquid is provided in a bottom part of the melting crucible. The silicon melted liquid is supplied into a mold 8 provided in a lower part and is cooled/coagulated to obtain polycrystalline silicon ingot. The liquid drain port is closed from the outside using a plug body 2, which is dropped into the mold at predetermined timing to drain the silicon melted liquid.


Inventors:
GOTO SHIGERU
Application Number:
JP2005095852A
Publication Date:
October 12, 2006
Filing Date:
March 29, 2005
Export Citation:
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Assignee:
KYOCERA CORP
International Classes:
F27B14/18; B22D25/04; F27D3/14; C01B33/02