Title:
MANUFACTURING METHOD OF DIELECTRIC
Document Type and Number:
Japanese Patent JP2005259393
Kind Code:
A
Abstract:
To provide a method of manufacturing SnTiO3 dielectric effectively and easily as a non-leaded, non-bismuth system ferroelectric having a property not inferior to a lead system ferroelectric without affecting adversely a human body.
This is a method of manufacturing a SnTiO3 dielectric having a perovskite type structure expressed by a chemical formula ABO3 and the target of A atom is made SnO or SnO2, and the target of B atom is made TiO2, and the target of A atom and target of B atom are formed alternately by a pulse laser deposition method so that they may be a half of the unit lattice of the perovskite type structure.
Inventors:
KOINUMA HIDEOMI
YONEZAWA YOSHIYUKI
KONISHI YOSHINORI
YONEZAWA YOSHIYUKI
KONISHI YOSHINORI
Application Number:
JP2004066423A
Publication Date:
September 22, 2005
Filing Date:
March 09, 2004
Export Citation:
Assignee:
FUJI ELECTRIC ADVANCED TECHNOL
International Classes:
C04B41/87; C23C14/08; H01B3/12; H01B19/00; (IPC1-7): H01B19/00; C04B41/87; C23C14/08; H01B3/12
Attorney, Agent or Firm:
Yoshikazu Tani
Kazuo Abe
Kazuo Abe
Previous Patent: ANISOTROPIC ION CONDUCTIVE LIQUID CRYSTAL CHEMICAL GEL AND ITS MANUFACTURING METHOD
Next Patent: BUTTON TYPE ALKALINE BATTERY
Next Patent: BUTTON TYPE ALKALINE BATTERY