Title:
プラズマ処理装置用電極板の製造方法
Document Type and Number:
Japanese Patent JP6958023
Kind Code:
B2
Abstract:
To provide an electrode plate for a plasma processing device, which can increase the uniformity in the amount etched by a plasma etching process.SOLUTION: An electrode plate 10 for a plasma processing device comprises a silicon carbide substrate with air holes 12 extending therethrough in its thickness direction. The air holes 12 are arranged so that when a surface roughness Ra in a region X within 0.5 mm from a surface is denoted by Ra, and a surface roughness Ra in a region Y over 0.5 mm from the surface is denoted by Ra, a surface roughness fluctuation rate defined by the following computational expression (1) is 30% or less: Surface roughness fluctuation rate (%)=Absolute value of (Ra-Ra)/Ra×100 (1).SELECTED DRAWING: Figure 1
Inventors:
Koji Higashi
Application Number:
JP2017125097A
Publication Date:
November 02, 2021
Filing Date:
June 27, 2017
Export Citation:
Assignee:
Mitsubishi Materials Corporation
International Classes:
H01L21/3065
Domestic Patent References:
| JP11104950A | ||||
| JP2014150252A |
Attorney, Agent or Firm:
Yasushi Matsunuma
Mitsuo Teramoto
Fumihiro Hosokawa
Kazunori Onami
Mitsuo Teramoto
Fumihiro Hosokawa
Kazunori Onami