Title:
エピタキシャルシリコンウェーハの製造方法、エピタキシャルシリコンウェーハ、及び固体撮像素子の製造方法
Document Type and Number:
Japanese Patent JP6737066
Kind Code:
B2
Abstract:
Provided are an epitaxial silicon wafer which can reduce metal contamination by exerting higher gettering capability and a method of manufacturing the same. In a method of manufacturing an epitaxial silicon wafer which includes a silicon wafer, a first silicon epitaxial layer formed on the silicon wafer, a first modifying layer in which carbon is implanted in a surface layer portion of the first silicon epitaxial layer, and a second silicon epitaxial layer on the first modifying layer, the peak concentration of the oxygen concentration profile in the first modifying layer after formation of the second silicon epitaxial layer is set to 2×1017 atoms/cm3 or less and the oxygen concentration of the second silicon epitaxial layer is set to be equal to or less than the SIMS detection lower limit value.
Inventors:
Ayumi Soda
Application Number:
JP2016162079A
Publication Date:
August 05, 2020
Filing Date:
August 22, 2016
Export Citation:
Assignee:
Sumco inc.
International Classes:
H01L21/322; H01L21/20; H01L21/205; H01L21/265; H01L27/146
Domestic Patent References:
| JP2015204316A | ||||
| JP2014099481A | ||||
| JP2014099482A |
Foreign References:
| WO2013153724A1 |
Attorney, Agent or Firm:
Kenji Sugimura
Keisuke Kawahara
Miyata Kousuke
Keisuke Kawahara
Miyata Kousuke