Title:
電界放出素子の製造方法
Document Type and Number:
Japanese Patent JP3583766
Kind Code:
B2
Abstract:
The present invention relates to a field emission device and a method of fabricating the same. The method includes forming a hole having a nanometer size using silicon semiconductor process and then forming an emitter within the hole to form a field emission device. Therefore, the present invention can reduce the driving voltage and thus lower the power consumption.
Inventors:
Anson doc
Ijinho
Chokaniku
Ijinho
Chokaniku
Application Number:
JP2002156358A
Publication Date:
November 04, 2004
Filing Date:
May 29, 2002
Export Citation:
Assignee:
Electronics and Telecommunications Research Institute
International Classes:
H01J1/304; H01J1/30; H01J9/02; (IPC1-7): H01J9/02
Domestic Patent References:
| JP2000323011A | ||||
| JP200031462A | ||||
| JP5198252A | ||||
| JP652790A |
Attorney, Agent or Firm:
Yoshikazu Tani
Kazuo Abe
Denichi Hashimoto
Kazuo Abe
Denichi Hashimoto