Title:
MANUFACTURING METHOD OF FIELD EMISSION TYPE ELECTRON SOURCE
Document Type and Number:
Japanese Patent JP3678193
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a manufacturing method of a field emission type electron source, having longer life service than that of conventional ones.
SOLUTION: In this manufacturing method of a field emission type electron source, at first a polycrystalline silicon layer 3 is formed on a lower electrode 12 (Fig. 1 (a)), and then a porous polycrystalline silicon layer 4 is formed by carrying an anode oxidation treatment process which makes the polycrystalline silicon layer 3 porous (Fig. 1 (b)), and further, a strong field drift layer 6 is formed by oxidizing the porous polycrystalline silicon layer 4 (Fig. 1 (c)). In the anodic oxidation treatment process using a treatment vessel filled with electrolyte, a current is made to flow between an electrode 12 and a cathode, while light emitted from an light source irradiates a surface of the polycrystalline silicon layer 3. Here, a current flowing between the electrode 12 and the cathode is made to gradually increase its current density up to a prescribed value during a time elapsed after starting, and then the current density is maintained at the prescribed value for a prescribed time, to finish energizing.
Inventors:
Tsutomu Hibara
Takuya Koda
Nobuyoshi Koshida
Takuya Koda
Nobuyoshi Koshida
Application Number:
JP2001361616A
Publication Date:
August 03, 2005
Filing Date:
November 27, 2001
Export Citation:
Assignee:
MATSUSHITA ELECTRIC WORKS,LTD.
International Classes:
H01J9/02; (IPC1-7): H01J9/02
Domestic Patent References:
| JP11329213A | ||||
| JP10269932A | ||||
| JP2001126610A | ||||
| JP2001189123A |
Attorney, Agent or Firm:
Keisei Nishikawa
Atsuo Mori
Atsuo Mori
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