Title:
窒化ガリウム基板、半導体デバイスの製造方法、および、窒化ガリウム層接合基板の製造方法
Document Type and Number:
Japanese Patent JP6481706
Kind Code:
B2
Abstract:
A gallium nitride substrate comprising a first main surface and a second main surface opposite thereto, wherein the first main surface is a non-polar or semi-polar plane, a dislocation density measured by a room-temperature cathode luminescence method in the first main surface is 1×104 cm−2 or less, and an averaged dislocation density measured by a room-temperature cathode luminescence method in an optional square region sizing 250 μm×250 μm in the first main plan is 1×106 cm−2 or less.
Inventors:
Yusuke Tsukada
Hidekazu Kubo
Kazunori Kamata
Hideo Fujisawa
Tatsuhiro Ohata
Hirotaka Ikeda
Matsumoto So
Mikawa Yutaka
Hidekazu Kubo
Kazunori Kamata
Hideo Fujisawa
Tatsuhiro Ohata
Hirotaka Ikeda
Matsumoto So
Mikawa Yutaka
Application Number:
JP2017080453A
Publication Date:
March 13, 2019
Filing Date:
April 14, 2017
Export Citation:
Assignee:
Mitsubishi Chemical Corporation
International Classes:
C30B29/38; H01L33/32
Domestic Patent References:
| JP2012066983A | ||||
| JP2002029897A | ||||
| JP2008501606A | ||||
| JP2013209260A | ||||
| JP2013227208A |
Foreign References:
| WO2012074031A1 |
Other References:
Melvin MCLAURIN, et al.,P-type conduction in stacking-fault-free m-plane GaN,Physica Status Solidi RRL: Rapid Research Letters,2007年,vol.1,No.3,p.110-112
Kenji FUJITO,et al.,High-quality nonpolar m-plane GaN substrates grown by HVPE,phys. stat. sol. (a),2008年,vol.205,no.5,p.1056-1059
Kenji FUJITO,et al.,High-quality nonpolar m-plane GaN substrates grown by HVPE,phys. stat. sol. (a),2008年,vol.205,no.5,p.1056-1059
Attorney, Agent or Firm:
Yoshiyuki Kawaguchi
Daisuke Takada
Shinichi Sanuki
Takeshi Niwa
Toshiaki Shimoda
Daisuke Takada
Shinichi Sanuki
Takeshi Niwa
Toshiaki Shimoda