Title:
ハーフトーン型位相シフトマスクブランクの製造方法、位相シフトマスクブランク製造用スパッタリングターゲット、及び、位相シフトマスクの製造方法
Document Type and Number:
Japanese Patent JP4488892
Kind Code:
B2
Abstract:
To provide a method for manufacturing a mask blank capable of manufacturing a high quality mask blank that suppresses generation of defects in a thin film for forming a mask pattern with high yields, a method for manufacturing a transfer mask that manufactures the thin film of the mask blank by patterning, and a sputtering target used for manufacturing the mask blank. By using the sputtering target containing silicon and having a hardness of 900 HV or more in Vickers' hardness, the thin film for forming the mask pattern on a substrate is formed by sputtering, and the high quality mask blank that suppresses generating of defects is manufactured, and further the transfer mask is manufactured by patterning the thin film.
Inventors:
Mitsui Masaru
Application Number:
JP2004528898A
Publication Date:
June 23, 2010
Filing Date:
August 19, 2003
Export Citation:
Assignee:
HOYA CORPORATION
International Classes:
A61N5/00; C23C14/00; C23C14/06; C23C14/32; C23C14/34; G03F1/24; G03F1/32; G03F1/68; G03F9/00; G21G5/00; H01L21/027
Domestic Patent References:
| JP2003055763A | 2003-02-26 | |||
| JP2002062632A | 2002-02-28 | |||
| JP2001183805A | 2001-07-06 | |||
| JPH11184067A | 1999-07-09 | |||
| JPH11129516A | 1999-05-18 | |||
| JP2002182365A | 2002-06-26 | |||
| JP2002090978A | 2002-03-27 | |||
| JP2001303243A | 2001-10-31 |
Attorney, Agent or Firm:
Aniya Setsuo
Toru Yui
Hitoshi Kiyono
Toru Yui
Hitoshi Kiyono