To provide a composite member which is suitable for a heat radiating member of a semiconductor element, to provide a method for producing the same, to provide the heat radiating member, and to provide a semiconductor device.
The composite member is obtained by compounding magnesium or a magnesium alloy with nonmetal inorganic material such as SiC, comprises the SiC by >70 vol.%, and has a thermal expansion coefficient of 4 to 8 ppm/K and a thermal conductivity of ≥180 W/m.K. Since the composite member has excellent consistency with the thermal expansion coefficient of a semiconductor element, and further, has excellent heat radiating properties, it is suitably utilizable for the heat radiating member of a semiconductor element. In the nonmetal inorganic material, by utilizing a compact such as a sintered compact having a network part coupling the nonmetal inorganic material each other, the content of the nonmetal inorganic material in the composite member can be easily increased, and further, by the presence of the network part in the composite member, excellent heat properties can be exhibited.
COPYRIGHT: (C)2011,JPO&INPIT
Yoshihiro Nakai
Taiichiro Nishikawa
Yoshiyuki Takagi
Toshiya Ikeda
Allied Material Co., Ltd.
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