Title:
高純度ハフニウムの製造方法
Document Type and Number:
Japanese Patent JP5406104
Kind Code:
B2
Abstract:
The present invention relates to high purity hafnium having a purity of 4N or higher excluding zirconium and gas components and an oxygen content of 40wtppm or less, and a target and thin film formed from such high purity hafnium, and high purity hafnium having a purity of 4N or higher excluding zirconium and gas components and in which the content of sulfur and phosphorus is respectively 10wtppm or less. The present invention also relates to a high purity hafnium material which uses a hafnium sponge with reduced zirconium as the raw material, and in which the content of oxygen, sulfur and phosphorus containing in the hafnium is reduced, as well as to a target and thin film formed from such material, and to the manufacturing method of high purity hafnium. Thereby provided is efficient and stable manufacturing technology which enables the manufacture of a high purity hafnium material, and a target and thin film formed from such material.
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Inventors:
Yuichiro Shindo
Application Number:
JP2010086629A
Publication Date:
February 05, 2014
Filing Date:
April 05, 2010
Export Citation:
Assignee:
jx Nippon Mining & Metals Co., Ltd.
International Classes:
C23C14/34; C22B3/04; C22B3/26; C22B5/04; C22B9/02; C22B9/22; C22B34/14; C22C27/00
Domestic Patent References:
| JP2002105552A | ||||
| JP62164863A | ||||
| JP10287402A | ||||
| JP2002206103A | ||||
| JP4358030A |
Foreign References:
| WO2005010220A1 |
Other References:
O.N.Carlson,F.A.Schmidt,J.C.Sever,Electrotransport of Carbon,Nitrogen,and Oxygen in Hafnium Metal,Metallurgical Transactions,1973年,4,p2407-2411
三村耕司、一色実,高融点金属の高純度化の現状,Bulletin of the Institute for Advanced Materials Processing,1998年,53(1/2),p66-78
三村耕司、一色実,高融点金属の高純度化の現状,Bulletin of the Institute for Advanced Materials Processing,1998年,53(1/2),p66-78
Attorney, Agent or Firm:
Isamu Ogoshi