To provide a method for manufacturing high-purity zirconium or halfnium powder at a low cost and with safety, capable of reducing impurities thereof, which are obstacles to assurance of operational functions of a semi-conductor.
The method for manufacturing the high-purity zirconium or halfnium powder includes the steps of: applying electron beam to zirconium or halfnium raw material for melting it to a high-purity level and casting the resultant molten metal into an ingot; heating an ingot or chips of the resultant high-purity zirconium or hafnium to 500C in a hydrogen atmosphere to be hydrogenated; cooling the ingot and peeling the zirconium or halfnium hydride powder from the ingot to obtain high-purity zirconium hydride or halfnium hydride powder; and removing hydrogen from the high-purity zirconium hydride or halfnium hydride powder.
JPS63143209A | 1988-06-15 | |||
JPH04350105A | 1992-12-04 | |||
JPH04358030A | 1992-12-11 | |||
JPH05163508A | 1993-06-29 | |||
JPH07118710A | 1995-05-09 | |||
JPH1150110A | 1999-02-23 | |||
JPH1017908A | 1998-01-20 | |||
JP2001050160A | 2001-02-23 | |||
JPS63143209A | 1988-06-15 | |||
JPH04350105A | 1992-12-04 | |||
JPH04358030A | 1992-12-11 | |||
JPH05163508A | 1993-06-29 | |||
JPH07118710A | 1995-05-09 | |||
JPH1150110A | 1999-02-23 | |||
JPH1017908A | 1998-01-20 | |||
JPH0610016A | 1994-01-18 | |||
JPH0754017A | 1995-02-28 |