To provide a method for forming a cavity by etching only a sacrificial film, in a sensor which includes the cavity formed by etching the sacrificial film.
A manufacturing method for an infrared sensor includes: an insulating film forming step of forming an insulating film 14 on a substrate 2; a recess forming step of forming a recess 15 on the insulating film 14; a sacrificial film forming step of forming a sacrificial film made of a silicon oxide on the recess 15; a support part forming step of forming a support part 23 on the sacrificial film; a detector forming step of forming an infrared detector 4 on the support part 23; and an etching step of forming a cavity 16 by etching the sacrificial film by using an etchant. The insulating film has corrosion resistance to the etchant.
Osamu Suzawa
Kazuhiko Miyasaka
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