To provide a manufacturing method of an integrated circuit board including a ferroelectric capacitor.
A manufacturing method of an integrated circuit board 11 including a ferroelectric capacitor comprises: a first step of sequentially forming a first electrode layer 12, a ferroelectric thin film 23a and a second electrode 12c on a semiconductor substrate 21; a second step of forming take-out electrodes 11a-11d on a top face of the integrated circuit board 11; a third step of coating, for example, a bonding resin material 14 from above the take-out electrodes of the integrated circuit board 11; a fourth step of bonding the semiconductor substrate 21 upside down on the integrated circuit board 11 in an overlapping manner; a fifth step of removing only the semiconductor substrate 21 with the ferroelectric thin film 23a and electrodes 12c, d of the ferroelectric thin film 23a left on the integrated circuit board 11; a sixth step of patterning the first electrode layer 12 on the ferroelectric thin film 23a to form a first electrode 12d; and a seventh step of forming electrode connection parts 12a, b for connecting the electrode 12c on the ferroelectric thin film 23a with the take-out electrodes 11a, b on the integrated circuit board 11.
JPH0220039 | EVALUATING METHOD FOR SINGLE EVENT RESISTANCE OF SEMICONDUCTOR ELEMENT |
JPWO2003015169 | Semiconductor devices and IC cards |
JPH01179443 | SEMICONDUCTOR DEVICE |
ESASHI MASAKI