To provide a manufacturing method for a light-emitting device in which damage of an element due to static electricity caused through the manufacture of a light-emitting device can be reduced, and to provide a light-emitting device in which a defect due to damage of an element caused by the static electricity is reduced.

A manufacturing method for a light-emitting device includes a step of manufacturing a planar type transistor for driving a light-emitting element. In the step of manufacturing the transistor, when a semiconductor layer serving as an active layer is formed, lattice-form first semiconductor layers extending in a row direction and a column direction are formed on a substrate and plural second semiconductor layers separated into island shapes are formed between the first semiconductor layers. The second semiconductor layer serves as the active layer of the transistor.